Patent · US Active

Ion implantation method, ion implantation apparatus and semiconductor device

US11195695B2 · kind B2 · utility

1Cited by

1References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Moriz Jelinek · Villach, AT
Michael Brugger · Seeboden, AT
Hans-Joachim Schulze · Taufkirchen, DE
Werner Schustereder · Villach, AT
Peter Zupan · Villach, AT

Key dates

Filing date	Aug 24, 2018
Grant date	Dec 7, 2021
Priority date	—
Expiry date	Apr 15, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8325
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An ion implantation method includes changing an ion acceleration energy and/or an ion beam current density of an ion beam while effecting a relative movement between a semiconductor substrate and the ion beam impinging on a surface of the semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.