IC structure with short channel gate structure having shorter gate height than long channel gate structure
US11195761B2 · kind B2 · utility
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2References
18Claims
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Key dates
| Filing date | Feb 28, 2020 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Feb 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit (IC) structure includes a long channel (LC) gate structure over a long channel region, the LC gate structure having a first gate height; and a short channel (SC) gate structure over a short channel region, the SC gate structure having a second gate height. The short channel region is shorter in length than the long channel region. The second gate height of the SC gate structure is no larger than the first gate height of the LC gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.