Encapsulation topography-assisted self-aligned MRAM top contact
US11195993B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2019 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Dec 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Encapsulation topography-assisted techniques for forming self-aligned top contacts in MRAM devices are provided. In one aspect, a method for forming an MRAM device includes: forming MTJs on interconnects embedded in a first dielectric; depositing an encapsulation layer over the MTJs; burying the MTJs in a second dielectric; patterning a trench in the second dielectric over the MTJs exposing the encapsulation layer over tops of the MTJs which creates a topography at the trench bottom; forming a metal line in the trench over the topography; recessing the metal line which breaks up the metal line into segments separated by exposed peaks of the encapsulation layer; recessing the exposed peaks of the encapsulation layer to form recesses at the tops of the MTJs; and forming self-aligned contacts in the recesses. An MRAM device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.