Non-volatile memory device and control method

US11205494B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Jianquan Jia · 红钢城街道, CN
• Kaikai You · 红钢城街道, CN
• Ying Cui · 红钢城街道, CN
• Kaiwei Li · 红钢城街道, CN
• Yali Song · 红钢城街道, CN
• Shan Li · 红钢城街道, CN
• An Zhang · Kunshan, CN

Key dates

• Filing date: Feb 18, 2021
• Grant date: Dec 21, 2021
• Expiry date: Feb 18, 2041

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C16/24
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A memory device includes a memory array including memory strings. Each memory string includes a plurality of top memory cells, a plurality of bottom memory cells, and one or more dummy memory cells between the top memory cells and the bottom memory cells. The memory device also includes a plurality of word lines respectively coupled to gate terminals of the top memory cells and the bottom memory cells, and one or more dummy word lines respectively coupled to gate terminals of the one or more dummy memory cells. The memory device further includes a control circuit configured to program a target memory cell coupled to a selected word line of the plurality of word lines. To program the target memory cell, the control circuit is configured to apply a biased dummy word line pre-pulse signal to the one or more dummy word lines in a pre-charge period prior to a programming period.