Hybrid bonding using dummy bonding contacts and dummy interconnects

US11205619B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Tao Wang · Beijing, CN
• Si Ping Hu · Hubei, CN
• Jia Wen Wang · 红钢城街道, CN
• Shi Qi Huang · Hubei, CN
• Jifeng Zhu · Hubei, CN
• Jun Chen · Hubei, CN
• Zi Qun Hua · 红钢城街道, CN

Key dates

• Filing date: Jul 8, 2020
• Grant date: Dec 21, 2021
• Expiry date: Aug 25, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/80896
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. At least one first interconnect is a first dummy interconnect. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. At least one second interconnect is a second dummy interconnect. The second semiconductor structure further includes a second bonding layer including second bonding contacts. Each second interconnect is in contact with a respective second bonding contact. The semiconductor device further includes a bonding interface between the first and second bonding layers. Each first bonding contact is in contact with a respective second bonding contact at the bonding interface.