High-level output voltage training for non-volatile memory

US11210241B1 · kind B1 · utility

Assignee

• Sandisk Technologies, Inc. · US

Inventors

• Nitin Gupta · Savanuru, IN
• Ashish Savadia · Savanuru, IN
• Jayanth Mysore Thimmaiah · Bengaluru, IN
• Ramakrishnan Subramanian · Bengaluru, IN
• Rampraveen Somasundaram · Tiruvannamalai, IN
• Shiv Harit Mathur · Bengaluru, IN
• Vinayak Ghatawade · Savanuru, IN
• Siddesh Darne · Milpitas, US
• Venkatesh Ramachandra · San Jose, US
• Elkana Richter · Omer, IL

Key dates

• Filing date: Oct 13, 2020
• Grant date: Dec 28, 2021
• Expiry date: Oct 13, 2040

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C16/30
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A data storage system includes a storage medium including plurality of memory cells, a storage controller in communication with the storage medium, an electrical interface circuitry configured to pass data via a channel disposed between the storage medium and the storage controller; and voltage training circuitry configured to train a high-level output voltage (VOH) for each of a plurality of data lines of the channel. Training the VOH includes, for each of the plurality of data lines of the channel, calibrating a pull-up driver of the storage controller against an on-die termination circuit of the storage medium, calibrating a pull-down driver of the storage controller against the pull-up driver of the storage controller, and calibrating an on-die termination circuit of the storage controller against a pull-up driver of the storage medium.