Semiconductor device and method of manufacturing a semiconductor device
US11211459B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2019 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Dec 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/441
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An auxiliary carrier and a silicon carbide substrate are provided. The silicon carbide substrate includes an idle layer and a device layer between a main surface at a front side of the silicon carbide substrate and the idle layer. The device layer includes a plurality of laterally separated device regions. Each device region extends from the main surface to the idle layer. The auxiliary carrier is structurally connected with the silicon carbide substrate at the front side. The idle layer is removed. A mold structure is formed that fills a grid-shaped groove that laterally separates the device regions. The device regions are separated, and parts of the mold structure form frame structures laterally surrounding the device regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.