Patent · US Active

Semiconductor device and method for forming a semiconductor device

US11217500B2 · kind B2 · utility

0Cited by

1References

26Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Jens Peter Konrath · Villach, AT
Wolfgang Bergner · Waldbüttelbrunn, DE
Romain Esteve · Munich, DE
Richard Gaisberger · Sankt Veit in der Gegend, AT
Florian Grasse · Hohenthurn, AT
Jochen Hilsenbeck · Villach, AT
Ravi Keshav Joshi · Klagenfurt, AT
Stefan Kramp · Villach, AT
Stefan Krivec · Villach, AT
Grzegorz Lupina · Villach, AT
Hiroshi Narahashi · Villach, AT
Andreas Voerckel · Finkenstein, AT
Stefan Woehlert · Villach, AT

Key dates

Filing date	Apr 9, 2019
Grant date	Jan 4, 2022
Priority date	—
Expiry date	Apr 9, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/106
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a contact metallization layer arranged on a semiconductor substrate, an inorganic passivation structure arranged on the semiconductor substrate, and an organic passivation layer. The organic passivation layer is located between the contact metallization layer and the inorganic passivation structure, and located vertically closer to the semiconductor substrate than a part of the organic passivation layer located on top of the inorganic passivation structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.