Patent · US Active

Etching of metal oxides using fluorine and metal halides

US11239091B2 · kind B2 · utility

0Cited by

0References

20Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Keenan N. Woods · San Ramon, US
Zhenjiang Cui · San Jose, US
Mark Saly · Santa Clara, US

Key dates

Filing date	Jun 11, 2020
Grant date	Feb 1, 2022
Priority date	—
Expiry date	Jun 11, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/0206
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Embodiments of this disclosure provide methods for etching oxide materials. Some embodiments of this disclosure provide methods which selectively etch oxide materials over other materials. In some embodiments, the methods of this disclosure are performed by atomic layer etching (ALE). In some embodiments, the methods of this disclosure are performed within a processing chamber comprising a nickel chamber material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.