Method of forming an interconnect structure with enhanced corner connection
US11239165B2 · kind B2 · utility
2Cited by
12References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2020 |
| Grant date | Feb 1, 2022 |
| Priority date | — |
| Expiry date | Apr 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Interconnect structures and methods for forming the interconnect structures generally include forming a bulk metal encapsulated in first and second interlayer dielectrics, a liner layer about a lower surface of the bulk metal and a metal cap layer about an upper surface of the bulk metal. The liner layer is in the first interlayer dielectric and the metal cap layer is in the second interlayer dielectric, wherein liner layer and the metal cap layer are different metals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.