Forming a barrier material on an electrode
US11251261B2 · kind B2 · utility
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34References
9Claims
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Key dates
| Filing date | May 17, 2019 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | May 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods, apparatuses, and systems related to forming a barrier material on an electrode are described. An example method includes forming a top electrode of a storage node on a dielectric material in a semiconductor fabrication sequence and forming, in-situ in a semiconductor fabrication apparatus, a barrier material on the top electrode to reduce damage to the dielectric material when ex-situ of the semiconductor fabrication apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.