Stacked spin-orbit-torque magnetoresistive random-access memory
US11251362B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2020 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | Aug 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/20
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a first electrode upon a conductive contact of an underlying semiconductor device, forming a first vertical magnetoresistive random-access memory (MRAM) cell stack upon the first electrode, forming a spin-Hall-effect (SHE) layer above and in electrical contact with the MRAM cell stack, forming a protective dielectric layer covering a portion of the SHE layer, forming a second vertical MRAM cell stack above and in electrical contact with an exposed portion of the SHE layer, forming a second electrode above and in electrical contact with the second vertical MRAM cell stack, and forming a metal contact above and in electrical connection with the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.