Chen Zhang
384Patents
15h-index
160Co-inventors
89Inventor score
Filing activity: Sep 15, 1995 → Dec 20, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| USD904724S1 | Safe | General | 39 | Active |
| US9721897B1 | Transistor with air spacer and self-aligned contact | Electricity | 38 | Active |
| US9899515B1 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Electricity | 34 | Active |
| US9859166B1 | Vertical field effect transistor having U-shaped top spacer | Electricity | 34 | Active |
| USD903508S1 | Watch case | General | 30 | Active |
| US9761728B1 | Self-aligned source/drain junction for vertical field-effect transistor (FET) and method of forming the same | Electricity | 28 | Active |
| US9853028B1 | Vertical FET with reduced parasitic capacitance | Electricity | 28 | Active |
| US9859409B2 | Single-electron transistor with wrap-around gate | Electricity | 27 | Active |
| US6704883B1 | Event-enabled distributed testing system | Electricity | 25 | Expired |
| US9842914B1 | Nanosheet FET with wrap-around inner spacer | Electricity | 23 | Active |
| US10032867B1 | Forming bottom isolation layer for nanosheet technology | Electricity | 23 | Active |
| US10229971B1 | Integration of thick and thin nanosheet transistors on a single chip | Electricity | 23 | Active |
| US9899372B1 | Forming on-chip metal-insulator-semiconductor capacitor | Electricity | 19 | Active |
| US10297513B1 | Stacked vertical NFET and PFET | Electricity | 19 | Active |
| US9607899B1 | Integration of vertical transistors with 3D long channel transistors | Electricity | 16 | Active |
| US10483166B1 | Vertically stacked transistors | Electricity | 15 | Active |
| US10141448B1 | Vertical FETs with different gate lengths and spacer thicknesses | Electricity | 15 | Active |
| US9741717B1 | FinFETs with controllable and adjustable channel doping | Electricity | 14 | Active |
| USD882638S1 | Portable inflation pump | General | 13 | Active |
| US10083871B2 | Fabrication of a vertical transistor with self-aligned bottom source/drain | Electricity | 13 | Active |
| US9799655B1 | Flipped vertical field-effect-transistor | Electricity | 13 | Active |
| US10217674B1 | Three-dimensional monolithic vertical field effect transistor logic gates | Electricity | 13 | Active |
| US9935195B1 | Reduced resistance source and drain extensions in vertical field effect transistors | Electricity | 13 | Active |
| USD917575S1 | Handheld tire inflator | General | 13 | Active |
| US9721845B1 | Vertical field effect transistors with bottom contact metal directly beneath fins | Electricity | 12 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.