Magnetic tunnel junctions suitable for high temperature thermal processing
US11251364B2 · kind B2 · utility
2Cited by
3References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 27, 2020 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | Jan 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/20
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Embodiments herein provide film stacks that include a buffer layer; a synthetic ferrimagnet (SyF) coupling layer; and a capping layer, wherein the capping layer comprises one or more layers, and wherein the capping layer, the buffer layer, the SyF coupling layer, or a combination thereof, is not fabricated from Ru.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.