In-situ temperature mapping for epi chamber

US11261538B1 · kind B1 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Ala Moradian · Sunnyvale, US
• Zuoming ZHU · Sunnyvale, US
• Patricia M. Liu · Saratoga, US
• Shu-Kwan LAU · Sunnyvale, US
• Flora Fong-Song CHANG · Saratoga, US
• Enle CHOO · Saratoga, US
• Zhiyuan Ye · San Jose, US

Key dates

• Filing date: Sep 21, 2020
• Grant date: Mar 1, 2022
• Expiry date: Sep 21, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67248
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present invention provides methods and apparatus for processing semiconductor substrates in an epitaxy chamber configured to map a temperature profile for both substrates and interior chamber components. In one embodiment, the semiconductor processing chamber has a body having ceiling and a lower portion defining an interior volume. A substrate support is disposed in the interior volume. A mounting plate is coupled to the ceiling outside the interior volume. A movement assembly is coupled to the mounting plate. A sensor is coupled to the movement assembly and moveable relative to the ceiling. The sensor is configured to detect a temperature location in the interior volume.