Etching method and substrate processing apparatus
US11264248B2 · kind B2 · utility
0Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2019 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Jun 1, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching a substrate including an etching film and a mask formed on the etching film is provided. The mask includes a first pattern of a first recess having a first opening and a second pattern of a second recess having a second opening. The method includes etching the etching film to a predetermined depth; depositing a protective film on the mask after the etching; and etching the etching film after the depositing. The first opening is smaller than the second opening. As a result of the depositing, the first opening of the first pattern is clogged and the second opening of the second pattern is not clogged.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.