Patent · US Active

Voltage offset bin selection by die group for memory devices

US11270772B1 · kind B1 · utility

3Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 31, 2020
Grant dateMar 8, 2022
Priority date
Expiry dateAug 31, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2211/5644
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

One or more blocks at the memory device are programed. The one or more blocks are associated with a block family and with one or more dice of a die group. A voltage offset bin associated with the die group and the block family is determined based on a subset of dice of the die group. Metadata associated with the memory device is appended to include a record associating the die group and the block family with the voltage offset bin.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.