Semiconductor device power metallization layer with stress-relieving heat sink structure

US11276624B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Michael Nelhiebel · Villach, AT
• Heiko Assmann · Dresden, DE
• Olaf Heitzsch · Coswig, DE
• Jakob Kriz · Ochtrup, DE
• Sven Lanzerstorfer · Feldkirchen in Kärnten, AT
• Rainer Pelzer · Wernberg, AT
• Werner Robl · Regensburg, DE
• Bernhard Weidgans · Bernhardswald, DE
• Johannes Zechner · Schiefling, AT

Key dates

• Filing date: Dec 17, 2019
• Grant date: Mar 15, 2022
• Expiry date: Mar 17, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/4871
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes: a semiconductor substrate; a power device formed in the semiconductor substrate; a metal bilayer formed over the semiconductor substrate, the metal bilayer including a discontinuous metal layer formed on and in contact with a continuous base metal layer; and one or more contact pads formed in the metal bilayer or in a metallization layer above the metal bilayer. The discontinuous metal layer includes a plurality of metal blocks which are laterally spaced apart from one another and which form a heat sink structure over the power device. The continuous base metal layer is configured to laterally spread heat energy from the power device to the plurality of metal blocks. Methods of producing the semiconductor device are also described.