Spin orbit torque memory devices and methods of fabrication

US11276730B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Kevin P. O'Brien · Cincinnati, US
• Christopher J. Wiegand · Portland, US
• Tofizur Rahman · Portland, US
• Noriyuki Sato · Hillsboro, US
• Gary Allen · Portland, US
• James Pellegren · Portland, US
• Angeline Smith · Hillsboro, US
• Tanay Gosavi · Portland, US
• Sasikanth Manipatruni · Ithaca, US
• Kaan Oguz · Beaverton, US
• Benjamin Buford · Hillsboro, US
• Ian A. Young · Portland, US

Key dates

• Filing date: Jan 11, 2019
• Grant date: Mar 15, 2022
• Expiry date: Jan 11, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N52/80

Abstract

A perpendicular spin orbit memory device includes a first electrode having a magnetic material and platinum and a material layer stack on a portion of the first electrode. The material layer stack includes a free magnet, a fixed magnet above the first electrode, a tunnel barrier between the free magnet and the fixed magnet and a second electrode coupled with the fixed magnet.