Solid-state imaging device and camera system
US11282878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2018 |
| Grant date | Mar 22, 2022 |
| Priority date | — |
| Expiry date | May 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
Abstract
The present invention provides a solid-state imaging device and a camera system capable of recording a still image without using a recording medium. Each pixel P of an image sensor is provided with a photodiode, a transfer transistor, a reset transistor, and an amplifying transistor, as well as a memory element that has functions of a select transistor. The memory element has a structure integrating a drain side select transistor, a source side select transistor, and a memory transistor. By applying a program voltage to a memory gate electrode as a gate voltage, the memory transistor stores charge of an amount corresponding to an amount of light received by the photodiode in a charge storage layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.