Method of patterning a low-k dielectric film
US11302519B2 · kind B2 · utility
1Cited by
11References
20Claims
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Key dates
| Filing date | Sep 9, 2015 |
| Grant date | Apr 12, 2022 |
| Priority date | — |
| Expiry date | Sep 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
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