Jeremiah T. Pender
24Patents
9h-index
39Co-inventors
71Inventor score
Filing activity: Jun 30, 2000 → Mar 24, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7575007B2 | Chamber recovery after opening barrier over copper | Electricity | 195 | Active |
| US8980758B1 | Methods for etching an etching stop layer utilizing a cyclical etching process | Electricity | 187 | Active |
| US9165783B2 | Method of patterning a low-k dielectric film | Electricity | 117 | Active |
| US8748322B1 | Silicon oxide recess etch | Electricity | 115 | Active |
| US8802572B2 | Method of patterning a low-k dielectric film | Electricity | 115 | Active |
| US9543163B2 | Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process | Electricity | 113 | Active |
| US9478433B1 | Cyclic spacer etching process with improved profile control | Electricity | 106 | Active |
| US9093389B2 | Method of patterning a silicon nitride dielectric film | Electricity | 103 | Active |
| US6440864B1 | Substrate cleaning process | Electricity | 51 | Expired |
| US7620511B2 | Method for determining plasma characteristics | Electricity | 9 | Active |
| US7300597B2 | Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material | Electricity | 8 | Active |
| US7848898B2 | Method for monitoring process drift using plasma characteristics | Electricity | 8 | Active |
| US7309448B2 | Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material | Electricity | 5 | Expired |
| US8143138B2 | Method for fabricating interconnect structures for semiconductor devices | Electricity | 4 | Active |
| US7286948B1 | Method for determining plasma characteristics | Electricity | 3 | Active |
| US9721807B2 | Cyclic spacer etching process with improved profile control | Electricity | 2 | Active |
| US8932959B2 | Method and system for etching plural layers on a workpiece including a lower layer containing an advanced memory material | Electricity | 1 | Active |
| US8314033B2 | Method of patterning a low-k dielectric film | Electricity | 1 | Active |
| US11302519B2 | Method of patterning a low-k dielectric film | Electricity | 1 | Active |
| US7440859B2 | Method for determining plasma characteristics | Electricity | 1 | Active |
| US8980754B2 | Method of removing a photoresist from a low-k dielectric film | Electricity | 1 | Active |
| US9299577B2 | Methods for etching a dielectric barrier layer in a dual damascene structure | Electricity | 1 | Active |
| US8647990B2 | Method of patterning a low-K dielectric film | Electricity | 0 | Active |
| US9514953B2 | Methods for barrier layer removal | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.