Semiconductor device having an electrostatic discharge protection structure

US11302781B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Joachim Weyers · Grevesmühlen, DE
• Stefan Gamerith · Villach, AT
• Franz Hirler · Isen, DE
• Anton Mauder · Kolbermoor, DE

Key dates

• Filing date: Apr 12, 2018
• Grant date: Apr 12, 2022
• Expiry date: Apr 16, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/518

Abstract

A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. A transistor structure is formed is the semiconductor body. A trench structure extends from the first surface into the semiconductor body. An electrostatic discharge protection structure is accommodated in the trench structure. The electrostatic discharge protection structure includes a first terminal region and a second terminal region. A source contact structure at the first surface is electrically connected to source regions of the transistor structure and to the first terminal region. A gate contact structure at the first surface is electrically connected to a gate electrode of the transistor structure and to the second terminal region.