Patent · US Active

Group III nitride device and method of fabricating an ohmic contact for a group III nitride-based device

US11302783B2 · kind B2 · utility

0Cited by

1References

10Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Albert Birner · Regensburg, DE
Jan Ropohl · Regensburg, DE

Key dates

Filing date	Nov 25, 2019
Grant date	Apr 12, 2022
Priority date	—
Expiry date	Jan 9, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/47
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment, a Group III nitride device includes a multilayer Group III nitride structure and a first ohmic contact arranged on and forming an ohmic contact to the multilayer Group III nitride device structure. The first ohmic contact includes a base portion having a conductive surface, the conductive surface including a peripheral portion and a central portion, the peripheral portion and the central portion being substantially coplanar and being of differing composition, a conductive via positioned on the central portion of the conductive surface and a contact pad positioned on the conductive via.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.