Fin shaping using templates and integrated circuit structures resulting therefrom

US11302790B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Leonard P. GULER · Hillsboro, US
• Biswajeet Guha · Hillsboro, US
• Mark Armstrong · Portland, US
• William Hsu · Hillsboro, US
• Tahir Ghani · Portland, US
• Swaminathan Sivakumar · Portland, US

Key dates

• Filing date: Feb 23, 2018
• Grant date: Apr 12, 2022
• Expiry date: Feb 23, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

Fin shaping using templates, and integrated circuit structures resulting therefrom, are described. For example, integrated circuit structure includes a semiconductor fin having a protruding fin portion above an isolation structure above a substrate. The protruding fin portion has a vertical portion and one or more lateral recess pairs in the vertical portion. A gate stack is over and conformal with the protruding fin portion of the semiconductor fin. A first source or drain region is at a first side of the gate stack. A second source or drain region is at a second side of the gate stack opposite the first side of the gate stack.