Patent · US Active

Method of manufacturing a semiconductor device and semiconductor device

US11302795B2 · kind B2 · utility

0Cited by

0References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Jens Peter Konrath · Villach, AT
Andre Rainer Stegner · Unterhaching, DE
Helmut Strack · Hersbruck, DE

Key dates

Filing date	Jul 10, 2020
Grant date	Apr 12, 2022
Priority date	—
Expiry date	Jul 10, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8325
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a semiconductor device is proposed. A silicon carbide, SiC, semiconductor body is provided. Ions are introduced into the SiC semiconductor body through a first surface of the SiC semiconductor body by at least one ion implantation process. Thereafter, a SiC device layer is formed on the first surface of the SiC semiconductor body. Semiconductor device elements are formed in or over the SiC device layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.