Managing threshold voltage drift based on operating characteristics of a memory sub-system
US11307799B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2019 |
| Grant date | Apr 19, 2022 |
| Priority date | — |
| Expiry date | Nov 18, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/04
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Multiple sets of values corresponding to operating characteristics of a memory sub-system are established. For each of the sets of values, a read voltage level corresponding to a decreased bit error rate of a programming distribution of the memory sub-system is identified. A data structure is stored that includes the read voltage level for each set of values corresponding to the operating characteristics. In response to a read command, a current set of values of the operating characteristics is determined. Using the data structure, a stored read voltage level corresponding to the current set of values of the operating characteristics is identified. The read command is executed using the stored read voltage level corresponding to the current set of values of the operating characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.