Underlayer for photoresist adhesion and dose reduction
US11314168B2 · kind B2 · utility
12Cited by
42References
79Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2021 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Jan 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67225
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.