Method of forming a device with planar split gate non-volatile memory cells, high voltage devices and FinFET logic devices
US11315940B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2021 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Jan 19, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming memory cells, HV devices and logic devices on a substrate, including recessing the upper surface of the memory cell and HV device areas of the substrate, forming a polysilicon layer in the memory cell and HV device areas, forming first trenches through the first polysilicon layer and into the silicon substrate in the memory cell and HV device areas, filling the first trenches with insulation material, forming second trenches into the substrate in the logic device area to form upwardly extending fins, removing portions of the polysilicon layer in the memory cell area to form floating gates, forming erase and word line gates in the memory cell area, HV gates in the HV device area, and dummy gates in the logic device area from a second polysilicon layer, and replacing the dummy gates with metal gates that wrap around the fins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.