Membrane for EUV lithography
US11320731B2 · kind B2 · utility
1Cited by
8References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2016 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Apr 15, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70983
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and including a stack having: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.