Gaussian modeling for soft-read threshold estimation in non-volatile memory devices
US11322214B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2021 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Jan 13, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/42
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Devices, systems and methods for improving the performance of a memory device are described. An example method includes obtaining a plurality of cell counts for each of a plurality of read voltages applied to the memory device, generating, based on the plurality of cell counts, a set of Gaussian models for a plurality of PV states corresponding to the plurality of read voltages, each of the set of Gaussian models comprising a mean parameter and a standard deviation parameter, determining, based on the set of Gaussian models, the mean parameter and the standard deviation parameter for each of the plurality of PV states, determining, based on the mean parameter and the standard deviation parameter for each of the plurality of PV states, a plurality of updated read voltages, and applying the plurality of updated read voltages to the memory device to retrieve information from the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.