Tin oxide films in semiconductor device manufacturing
US11322351B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2019 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Nov 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Tin oxide film on a semiconductor substrate is etched selectively in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H2) and a hydrocarbon. The hydrocarbon significantly improves the etch selectivity. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes H2 and a hydrocarbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.