Method of patterning a metal film with improved sidewall roughness
US11322364B2 · kind B2 · utility
1Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 8, 2020 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | May 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with an embodiment, a method of plasma processing includes etching a refractory metal by flowing oxygen into a plasma processing chamber, intermittently flowing a passivation gas into the plasma processing chamber, and supplying power to sustain a plasma in the plasma processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.