Avalanche photodiode

US11322639B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Mark D. Levy · Williston, US
• Siva P. Adusumilli · South Burlington, US
• John J. Ellis-Monaghan · Grand Isle, US
• Vibhor Jain · Williston, US
• Ramsey Hazbun · Colchester, US
• Pernell Dongmo · South Burlington, US
• Cameron E. Luce · Colchester, US
• Steven M. Shank · Jericho, US
• Rajendran Krishnasamy · South Burlington, US

Key dates

• Filing date: Apr 9, 2020
• Grant date: May 3, 2022
• Expiry date: Apr 18, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/1665

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to an avalanche photodiode and methods of manufacture. The structure includes: a substrate material having a trench with sidewalls and a bottom composed of the substrate material; a first semiconductor material lining the sidewalls and the bottom of the trench; a photosensitive semiconductor material provided on the first semiconductor material; and a third semiconductor material provided on the photosensitive semiconductor material.