Method of manufacturing a superjunction semiconductor device

US11329126B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Armin Tilke · Beacon, US
• Hans Weber · Villach, AT
• Christian Fachmann · Graz, AT
• Roman Knoefler · Villach, AT
• Gabor Mezoesi · Villach, AT
• Manfred Pippan · Barrie Path, AT
• Thomas Rupp · Stormville, US
• Michael Treu · Villach, AT
• Armin Willmeroth · Friedberg, DE

Key dates

• Filing date: Jun 26, 2018
• Grant date: May 10, 2022
• Expiry date: Jun 26, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/20
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In an embodiment, a method of fabricating a superjunction semiconductor device includes implanting first ions into a first region of a first epitaxial layer using a first implanting apparatus and nominal implant conditions to produce a first region in the first epitaxial layer comprising the first ions and a first implant characteristic and implanting second ions into a second region of the first epitaxial layer, the second region being laterally spaced apart from the first region, using second nominal implanting conditions estimated to produce a second region in the first epitaxial layer having the second ions and a second implant characteristic that lies within an acceptable maximum difference of the first implant characteristic.