Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices

US11335788B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Durai Vishak Nirmal Ramaswamy · Boise, US
• Ramanathan Gandhi · Boise, US
• Scott E. Sills · Boise, US

Key dates

• Filing date: Aug 30, 2018
• Grant date: May 17, 2022
• Expiry date: Aug 30, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/63

Abstract

A semiconductor device is disclosed. The semiconductor device includes a transistor including a source contact, a drain contact, and a channel region including an oxide semiconductor material as the channel material. At least one of the drain contact or the source contact includes a conductive material, such as ruthenium, to reduce the Schottky effects at the interface with the channel material.