Enhancement mode MISHEMT with GaN channel regrowth under a gate area

US11335798B2 · kind B2 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Peter Moens · Zottegem, BE
• Piet Vanmeerbeek · Sleidinge, BE
• Abhishek Banerjee · Houston, US
• Marnix Tack · Merelbeke, BE

Key dates

• Filing date: Jan 6, 2020
• Grant date: May 17, 2022
• Expiry date: Jan 6, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/27

Abstract

An Enhancement Mode (e-mode) Metal Insulator Semiconductor (MIS) High Electron Mobility Transistor (HEMT), or EMISHEMT, with GaN channel regrowth under a gate area, is described. The EMISHEMT with GaN channel regrowth under a gate area provides a normally-off device with a suitably high and stable threshold voltage, while providing a low gate leakage current. A channel layer provides a 2DEG and associated low on-resistance, while a channel-material layer extends through an etched recess and into the channel layer, and disrupts the 2DEG locally to enable the normally-off operation.