Marnix Tack
11Patents
4h-index
11Co-inventors
53Inventor score
Filing activity: Apr 7, 2006 → Jan 6, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7709889B2 | Semiconductor device with improved breakdown properties and manufacturing method thereof | Electricity | 15 | Active |
| US7667270B2 | Double trench for isolation of semiconductor devices | Electricity | 5 | Active |
| US7915155B2 | Double trench for isolation of semiconductor devices | Electricity | 4 | Active |
| US7608510B2 | Alignment of trench for MOS | Electricity | 4 | Active |
| US7989886B2 | Alignment of trench for MOS | Electricity | 2 | Active |
| US10797153B2 | Process of forming an electronic device including an access region | Electricity | 1 | Active |
| US8298889B2 | Process of forming an electronic device including a trench and a conductive structure therein | Electricity | 1 | Active |
| US9929261B2 | Electronic device including a HEMT with a segmented gate electrode | Electricity | 0 | Active |
| US10797152B2 | Process of forming an electronic device including an access region | Electricity | 0 | Active |
| US8648398B2 | Electronic device and a transistor including a trench and a sidewall doped region | Electricity | 0 | Active |
| US11335798B2 | Enhancement mode MISHEMT with GaN channel regrowth under a gate area | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.