Prolonging optical element lifetime in an EUV lithography system
US11340532B2 · kind B2 · utility
1Cited by
7References
29Claims
0Family size
Assignee
Inventors
- Yue Ma
- Antonius Theodorus Wilhelmus Kempen
- Klaus Hummler
- Johannes Hubertus Josephina Moors
- Jeroen Hubert Rommers
- Hubertus Johannes Van De Wiel
- Andrew David LaForge
- Fernando Brizuela
- Rob Carlo Wieggers
- Umesh Prasad Gomes
- Elena Nedanovska
- Celal Korkmaz
- Alexander Downn Kim
- Rui Miguel Duarte Rodrigues Nunes
- Hendrikus Alphonsus Ludovicus Van Dijck
- William Peter Van Drent
- Peter Gerardus Jonkers
- Qiushi Zhu
- Parham Yaghoobi
- Jan Steven Christiaan Westerlaken
- Martinus Hendrikus Antonius Leenders
- Alexander I. Ershov
- Igor V. Fomenkov
- Fei Liu
- Johannes Henricus Wilhelmus Jacobs
- Alexey Sergeevich Kuznetsov
Key dates
| Filing date | Feb 28, 2019 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Feb 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05G2/0094
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Degradation of the reflectivity of one or more reflective optical elements in a system (SO) for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber (26) containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.