Reliability scan assisted voltage bin selection
US11340813B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2020 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Nov 16, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A system can include a memory device and a processing device to perform operations that include identifying voltage offset bins of the memory device, each of the first voltage offset bins satisfying a first age threshold criterion, identifying one or more second voltage offset bins of the memory device, each of the second voltage offset bins satisfying a second age threshold criterion, identifying a first block family associated with one of the first voltage offset bins, and performing a first scan of a first block of the first block family by: identifying, based on determined values of the first data state metric, a first identified voltage offset bin, and identifying one or more values of a second data state metric in scan metadata generated by a second scan, and identifying, based on the one or more values of the second data state metric, a second identified voltage offset bin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.