Wafer bonding method and structure thereof

US11342185B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Shuai Guo · Beijing, CN
• Jia Wen Wang · 红钢城街道, CN
• Tao Ding · Pleasanton, US
• Rui Xing · Hubei, CN
• Xiao Jin Wang · Hubei, CN
• Jia Wang · Huizhou, CN
• Chun Long Li · Hubei, CN

Key dates

• Filing date: May 8, 2020
• Grant date: May 24, 2022
• Expiry date: May 30, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76251
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of wafer bonding method and structures thereof are disclosed. The wafer bonding method can include performing a plasma activation treatment on a front surface of a first and a front surface of a second wafer; performing a silica sol treatment on the front surfaces of the first and the second wafers; performing a preliminary bonding process of the first and second wafer; and performing a heat treatment of the first and the second wafers to bond the front surface of the first wafer to the front surface of the second wafers.