Patent · US Active

Method for producing a superjunction device

US11342187B2 · kind B2 · utility

0Cited by

4References

8Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Anton Mauder · Kolbermoor, DE
Hans Weber · Villach, AT
Franz Hirler · Isen, DE
Johannes Georg Laven · Taufkirchen, DE
Hans-Joachim Schulze · Taufkirchen, DE
Werner Schustereder · Villach, AT
Maximilian Treiber · Munich, DE
Daniel Tutuc · Finkenstein, AT
Andreas Voerckel · Finkenstein, AT

Key dates

Filing date	Apr 16, 2020
Grant date	May 24, 2022
Priority date	—
Expiry date	Jun 18, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/157
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Forming a semiconductor arrangement includes providing a first semiconductor layer having a first surface, forming a first plurality of trenches in the first surface of the first semiconductor layer, each of the trenches in the first plurality having first and second sidewalls that extend from the first surface to a bottom of the respective trench, implanting first type dopant atoms into the first and second sidewalls of each of the trenches in the first plurality, implanting second type dopant atoms into the first and second sidewalls of each of the trenches in the first plurality, and annealing the semiconductor arrangement to simultaneously activate the first type dopant atoms and the second type dopant atoms.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.