Cavity spacer for nanowire transistors
US11342411B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2018 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Aug 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0128
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A transistor structure includes a base and a body over the base. The body comprises a semiconductor material and has a first end portion and a second end portion. A gate structure is wrapped around the body between the first end portion and the second end portion, where the gate structure includes a gate electrode and a dielectric between the gate electrode and the body. A source is in contact with the first end portion and a drain is in contact with the second end portion. A first spacer material is on opposite sides of the gate electrode and above the first end portion. A second spacer material is adjacent the gate structure and under the first end portion of the nanowire body. The second spacer material is below and in contact with a bottom surface of the source and the drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.