Silicon carbide devices, semiconductor devices and methods for forming silicon carbide devices and semiconductor devices

US11342433B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ralf Siemieniec · Villach, AT
• Thomas Aichinger · Faak am See, AT
• Iris Moder · Villach, AT
• Francisco Javier Santos Rodriguez · Villach, AT
• Hans-Joachim Schulze · Taufkirchen, DE
• Carsten von Koblinski · Velden am Wörther See, AT

Key dates

• Filing date: Nov 25, 2019
• Grant date: May 24, 2022
• Expiry date: Nov 25, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A silicon carbide device includes a silicon carbide substrate having a body region and a source region of a transistor cell. Further, the silicon carbide device includes a titanium carbide gate electrode of the transistor cell.