Ruthenium etching composition and method
US11346008B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Nov 22, 2019 |
| Grant date | May 31, 2022 |
| Priority date | — |
| Expiry date | Nov 22, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K13/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention provides compositions useful for selectively etching ruthenium and/or copper. The compositions comprise certain periodate compounds, alkylammonium or alkylphosphonium hydroxides, carbonate or bicarbonate buffers, and water, wherein the pH of the composition is about 9 to about 12.5. The compositions of the invention are effectively utilized in the method of the invention and have been found to be capable of etching Cu and Ru at similar rates, i.e., >20 Å/min, while minimizing etch rates of dielectrics (<2 Å/min).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.