Efficient read-threshold calculation method for parametric PV-level modeling
US11355204B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2020 |
| Grant date | Jun 7, 2022 |
| Priority date | — |
| Expiry date | Sep 3, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Techniques related to methods and systems for improving a performance related to reading data stored in memory cells. The method includes selecting a first voltage read range and a second voltage read range from multiple voltage read ranges that are associated with a number of bits storable in a memory cell. The method includes receiving, a first set of parameters that represent a first probability distribution of first candidate voltage read thresholds within the first voltage read range. The method includes receiving a second set of parameters that represent a second probability distribution of second candidate voltage read thresholds within the second voltage read range. The method includes generating, based on an input to an objective function, a voltage read threshold. The method includes reading data stored in the memory cell based on the voltage read threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.