Bonded die assembly containing a manganese-containing oxide bonding layer and methods for making the same
US11362079B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2019 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Aug 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a bonded assembly includes providing a first semiconductor die containing a first substrate, first semiconductor devices, first dielectric material layers overlying the first semiconductor devices, and first metal interconnect structures, providing a second semiconductor die containing a second substrate, second semiconductor devices, second dielectric material layers overlying the second semiconductor devices, and second metal interconnect structures, depositing a manganese layer on a top surface of the first dielectric material layers, disposing the second semiconductor die on the manganese layer such that a surface of the second dielectric material layers contacts the manganese layer, and performing a bonding anneal to bond the first semiconductor die to the second semiconductor die and to convert the manganese layer into a manganese-containing oxide layer, such that the manganese-containing oxide layer is bonded to the first dielectric material layers and the second dielectric material layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.