Method for manufacturing an electronic component having multiple quantum dots
US11362181B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2019 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Nov 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A process for fabricating an electronic component with multiple quantum dots is provided, including providing a stack including a substrate, a nanostructure made of semiconductor material superposed over the substrate and including first and second quantum dots and a link linking the quantum dots, first and second control gate stacks arranged on the quantum dots, the gate stacks separated by a gap, the quantum dots and the link having a same thickness; partially thinning the link while using the gate stacks as masks to obtain the link, a thickness of which is less than that of the quantum dots; and conformally forming a dielectric layer on either side of the gate stacks so as to fill the gap above the partially thinned link. An electronic component with multiple quantum dots is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.