Spin orbit torque (SOT) memory devices and their methods of fabrication

US11367749B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Noriyuki Sato · Hillsboro, US
• Angeline Smith · Hillsboro, US
• Tanay Gosavi · Portland, US
• Sasikanth Manipatruni · Ithaca, US
• Kaan Oguz · Beaverton, US
• Kevin P. O'Brien · Cincinnati, US
• Tofizur Rahman · Portland, US
• Gary Allen · Portland, US
• Atm G. Sarwar · North Plains, US
• Ian A. Young · Portland, US
• Hui Jae Yoo · Hillsboro, US
• Christopher J. Wiegand · Portland, US
• Benjamin Buford · Hillsboro, US

Key dates

• Filing date: Jun 28, 2018
• Grant date: Jun 21, 2022
• Expiry date: Apr 16, 2040

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C11/1675
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

A spin orbit torque (SOT) memory device includes a magnetic tunnel junction (MTJ) device with one end coupled with a first electrode and an opposite end coupled with a second electrode including a spin orbit torque material. In an embodiment, a second electrode is coupled with the free magnet and coupled between a pair of interconnect line segments. The second electrode and the pair of interconnect line segments include a spin orbit torque material. The second electrode has a conductive path cross-section that is smaller than a cross section of the conductive path in at least one of the interconnect line segments.