Patent · US Active

Shielding structure for SiC devices

US11367775B1 · kind B1 · utility

2Cited by

0References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Michael Hell · Erlangen, DE
Rudolf Elpelt · Erlangen, DE
Caspar Leendertz · Munich, DE

Key dates

Filing date	Dec 21, 2020
Grant date	Jun 21, 2022
Priority date	—
Expiry date	Dec 23, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/393
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes: a SiC substrate; a device structure in or on the SiC substrate and subject to an electric field during operation of the semiconductor device; a current-conduction region of a first conductivity type in the SiC substrate below and adjoining the device structure; and a shielding region of a second conductivity type laterally adjacent to the current-conduction region and configured to at least partly shield the device structure from the electric field. The shielding region has a higher net doping concentration than the current-conduction region, and has a length (L) measured from a first position which corresponds to a bottom of the device structure to a second position which corresponds to a bottom of the shielding region. The current-conduction region has a width (d) measured between opposing lateral sides of the current-conduction region, and L/d is in a range of 1 to 10.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.